Metal droplet formation and motion during the III-V semiconductor evaporation

被引：11
|
作者：
Spirina, A. A. [1 ]
Shwartz, N. L. [1 ,2 ]
机构：
[1] AV Rzhanov Inst Semicond Phys SB RAS, Lavrentieva Aven 13, Novosibirsk 630090, Russia
[2] Novosibirsk State Tech Univ, Karl Marx Aven 20, Novosibirsk 630073, Russia
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 100卷
基金：
俄罗斯基础研究基金会;
关键词：
Metal droplets; III-V; Langmuir evaporation; Simulation; Monte Carlo; MONTE-CARLO-SIMULATION; VAPOR-PRESSURES; GAAS; GALLIUM; MECHANISM; FACES;
D O I：
10.1016/j.mssp.2019.05.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The process of metal droplet formation and motion during a high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The nanosized droplet motion mechanism during a high-temperature annealing is suggested. The reason for the droplet motion is the lateral drop-crystal interface dissolution in a liquid metal. The movement direction is determined by the difference in the (111)A and (111)B crystal facet dissolution rates. The step movement deceleration near the droplet can be a cause of step bunching.
引用
收藏
页码：319 / 325
页数：7
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