Piezoelectric III-V semiconductor devices

Strained III-V layers develop a charge polarization vector for all orientations except for the standard (001) one. Besides, by selecting the crystal orientation. a valence band engineering can be made, to exploit sub-band splitting and their anisotropies. Piezoelectric devices have shown superior performances in modulators, SEED's and HEMT's. Besides, very low threshold current have been achieved in strained lasers when grown along orientations different from the (001). It has been shown that the piezoelectric electric field is only partially screened at lasing. Polarization control in VCSEL's, and double harmonic generation, have also been proposed as another areas of application for structures ,sr own along non-(001) surfaces.