III-V semiconductor nanowire lasers

被引：0
|
作者：
Mokkapati, Sudha [1 ]
Saxena, Dhruv [1 ]
Nian-Jiang [1 ]
Gao, Qian [1 ]
Tan, Hark Hoe [1 ]
Jagadish, Chennupati [1 ]
机构：
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, GPO Box 4, Canberra, ACT 0200, Australia
来源：
2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014) | 2014年
关键词：
III-V semiconductor; nanowire; optoelectronic devices; lasers;
D O I：
10.1109/ISLC.2014.46
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present results on the design of GaAs and InP nanowire lasers. We will discuss the growth of high quantum efficiency, taper free photonic nanowires for laser applications and demonstrate room-temperature lasing from these nanowires.
引用
收藏
页码：217 / 218
页数：2
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