NEW ELECTRONIC-PROPERTIES OF METAL/III-V COMPOUND SEMICONDUCTOR INTERFACES

被引：1
|
作者：
BRILLSON, LJ
VITURRO, RE
CHANG, S
SHAW, JL
MAILHIOT, C
ZANONI, R
HWU, Y
MARGARITONDO, G
KIRCHNER, P
WOODALL, JM
机构：
来源：
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES | 1989年 / 148卷
关键词：
D O I：
10.1557/PROC-148-103
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：103 / 115
页数：13
相关论文
共 50 条
  • [1] ELECTRONIC-PROPERTIES OF METAL-III-V SEMICONDUCTOR INTERFACES
    LINDAU, I
    KENDELEWICZ, T
    NEWMAN, N
    LIST, RS
    WILLIAMS, MD
    SPICER, WE
    SURFACE SCIENCE, 1985, 162 (1-3) : 591 - 604
  • [2] BUILDUP OF III-V-COMPOUND SEMICONDUCTOR HETEROJUNCTIONS - STRUCTURAL AND ELECTRONIC-PROPERTIES OF MONOLAYER-THICK III-V OVERLAYERS ON III-V SUBSTRATES
    MOISON, JM
    GUILLE, C
    VANROMPAY, M
    BARTHE, F
    HOUZAY, F
    BENSOUSSAN, M
    PHYSICAL REVIEW B, 1989, 39 (03): : 1772 - 1785
  • [3] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR
    BRILLSON, LJ
    BRUCKER, CF
    KATNANI, AD
    STOFFEL, NG
    MARGARITONDO, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666
  • [4] CHARACTERIZATION OF INTERFACE STATES AT III-V COMPOUND SEMICONDUCTOR-METAL INTERFACES
    BURSTEIN, L
    BREGMAN, J
    SHAPIRA, Y
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2312 - 2316
  • [5] ALLOY DISORDER EFFECTS ON THE ELECTRONIC-PROPERTIES OF III-V QUATERNARY SEMICONDUCTOR ALLOYS
    EKPENUMA, SN
    MYLES, CW
    GREGG, JR
    PHYSICAL REVIEW B, 1990, 41 (06): : 3582 - 3591
  • [6] COMPARISON BETWEEN METAL AND ELECTROLYTE/(III-V) SEMICONDUCTOR INTERFACES
    ALLONGUE, P
    CACHET, H
    SURFACE SCIENCE, 1986, 168 (1-3) : 356 - 364
  • [7] THE EFFECTS OF MISFIT DISLOCATIONS ON THE ELECTRONIC-PROPERTIES OF III-V HETEROJUNCTIONS
    WOODALL, JM
    PETTIT, GD
    JACKSON, TN
    LANZA, C
    KAVANAGH, KL
    MAYER, JW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : C441 - C441
  • [8] THE ELECTRONIC-PROPERTIES AND CONTROL OF SEMICONDUCTOR INTERFACES
    WOODALL, JM
    KIRCHNER, PD
    FREEOUF, JL
    WARREN, AC
    CORROSION SCIENCE, 1990, 31 : 53 - 58
  • [9] ELECTRONIC-PROPERTIES AND CHEMICAL INTERACTIONS AT III-V COMPOUND SEMICONDUCTOR SURFACES - GERMANIUM AND OXYGEN ON GAAS(110) AND INP(110) CLEAVED SURFACES
    MONCH, W
    APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY): : 705 - 723
  • [10] III-V Compound Semiconductor Nanowires
    Joyce, H. J.
    Paiman, S.
    Gao, Q.
    Tan, H. H.
    Kim, Y.
    Smith, L. M.
    Jackson, H. E.
    Yarrison-Rice, J. M.
    Zhang, X.
    Zou, J.
    Jagadish, C.
    2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE, 2009, : 59 - +
12345