Novel back end-of-line process scheme for improvement of negative bias temperature instability lifetime

A novel back end-of-line (BEOL) process scheme is proposed to improve negative bias temperature instability (NBTI) characteristics through the characterization of the impact of each BEOL process on NBTI of p(+) gate metal oxide semiconductor field-effect transistor (PMOSFETs). It is demonstrated that NBTI is strongly dependent on the plasma enhanced nitride (PE-SiN) passivation film and H, sintering anneal. A new process scheme of N-2 annealing instead of H, annealing prior to PE-SiN deposition is proposed and proven to be highly efficient in improving NBTI without degradation of device performance and n(+) gate metal oxide semiconductor (NMOS) hot carrier lifetime.