Impact of negative-bias temperature instability on the lifetime of single-gate CMOS structures with ultrathin (4-6 nm) gate oxides

被引：0
|
作者：
Ogawa, Shigeo [1 ]
Shimaya, Masakazu [1 ]
Shiono, Noboru [1 ]
机构：
[1] Nippon Telegraph and Telephone Corp, Kanagawa-Ken, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 2 B期
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摘要：
CMOS integrated circuits
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页码：1484 / 1490
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  • [1] Impact of negative-bias temperature instability on the lifetime of single-gate CMOS structures with ultrathin (4-6 nm) gate oxides
    Ogawa, S
    Shimaya, M
    Shiono, N
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    [J]. MICROELECTRONIC ENGINEERING, 1999, 48 (1-4) : 83 - 86
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    [J]. JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 2019, 35 (01): : 119 - 125
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