Impact of negative-bias temperature instability on the lifetime of single-gate CMOS structures with ultrathin (4-6 nm) gate oxides

被引：0

作者：

Ogawa, Shigeo ^{[1
]}

Shimaya, Masakazu ^{[1
]}

Shiono, Noboru ^{[1
]}

机构：

[1] Nippon Telegraph and Telephone Corp, Kanagawa-Ken, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 2 B期

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D O I：

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学科分类号：

摘要：

CMOS integrated circuits

引用

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页码：1484 / 1490

共 35 条

[31] Impact of Activation Annealing Temperature on the Performance, Negative Bias Temperature Instability, and Time-to-Dielectric Breakdown Lifetime of High-κ/Metal Gate Stack p-Type Metal-Oxide-Semiconductor Field Effect Transistors
Sato, Motoyuki
Aoyama, Takayuki
Nara, Yasuo
Ohji, Yuzuru
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
[32] Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k/metal-gate p-type metal oxide semiconductor field effect transistors
Aoulaiche, M.
Kaczer, B.
Roussel, Ph. J.
O'Connor, R.
Houssa, M.
De Gendt, S.
Maes, H. E.
Groeseneken, G.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (01): : 463 - 467
[33] Interface trap and oxide charge generation under negative bias temperature instability of p -channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics
Zhu, Shiyang
Nakajima, Anri
Ohashi, Takuo
Miyake, Hideharu
Journal of Applied Physics, 2005, 98 (11):
[34] Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics -: art. no. 114504
Zhu, SY
Nakajima, A
Ohashi, T
Miyake, H
JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)
[35] Fabrication and Negative Bias Temperature Instability (NBTI) Study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 Passivation and HfO2 High-k and TaN Metal Gate
Gong, Xiao
Su, Shaojian
Liu, Bin
Wang, Lanxiang
Wang, Wei
Yang, Yue
Cheng, Ran
Kong, Eugene
Cheng, Buwen
Han, Genquan
Yeo, Yee-Chia
SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 949 - 956

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