Formation of Epitaxial Hf Germanide/Ge Contacts for Schottky Barrier Height Engineering

被引：0
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作者：
Nakatsuka, Osamu [1 ,2 ]
Suzuki, Akihiro [1 ]
McVittie, James [3 ]
Nishi, Yoshio [3 ]
Zaima, Shigeaki [2 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi, Japan
[3] Stanford Univ, Elect Dept, Stanford, CA 94305 USA
来源：
2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) | 2017年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：47 / 48
页数：2
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