SCHOTTKY-BARRIER HEIGHT OF SPUTTERED HFN CONTACTS ON SILICON

被引：1

|

作者：

PAN, ETS

NICOLET, MA

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 08期

关键词：

D O I：

10.1016/0038-1101(85)90063-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：775 / 777

页数：3

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