首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
SCHOTTKY-BARRIER HEIGHT OF SPUTTERED TIN CONTACTS ON SILICON
被引:32
|
作者
:
FINETTI, M
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
FINETTI, M
[
1
]
SUNI, I
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
SUNI, I
[
1
]
BARTUR, M
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
BARTUR, M
[
1
]
BANWELL, T
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
BANWELL, T
[
1
]
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
机构:
CALTECH,PASADENA,CA 91125
CALTECH,PASADENA,CA 91125
NICOLET, MA
[
1
]
机构
:
[1]
CALTECH,PASADENA,CA 91125
来源
:
SOLID-STATE ELECTRONICS
|
1984年
/ 27卷
/ 07期
关键词
:
D O I
:
10.1016/0038-1101(84)90131-X
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:617 / 623
页数:7
相关论文
共 50 条
[1]
SCHOTTKY-BARRIER HEIGHT OF SPUTTERED HFN CONTACTS ON SILICON
PAN, ETS
论文数:
0
引用数:
0
h-index:
0
PAN, ETS
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
SOLID-STATE ELECTRONICS,
1985,
28
(08)
: 775
-
777
[2]
SCHOTTKY-BARRIER HEIGHT OF IDEAL METAL CONTACTS TO GAAS
WALDROP, JR
论文数:
0
引用数:
0
h-index:
0
WALDROP, JR
APPLIED PHYSICS LETTERS,
1984,
44
(10)
: 1002
-
1004
[3]
NUMERICAL-ANALYSIS OF SILICON SCHOTTKY-BARRIER CONTACTS
GUO, SF
论文数:
0
引用数:
0
h-index:
0
机构:
NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
GUO, SF
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(08)
: C325
-
C325
[4]
METAL CONTACTS TO GAAS WITH 1 EV SCHOTTKY-BARRIER HEIGHT
WALDROP, JR
论文数:
0
引用数:
0
h-index:
0
WALDROP, JR
GRANT, RW
论文数:
0
引用数:
0
h-index:
0
GRANT, RW
APPLIED PHYSICS LETTERS,
1988,
52
(21)
: 1794
-
1796
[5]
FORMATION AND SCHOTTKY-BARRIER HEIGHT OF METAL CONTACTS TO BETA-SIC
WALDROP, JR
论文数:
0
引用数:
0
h-index:
0
WALDROP, JR
GRANT, RW
论文数:
0
引用数:
0
h-index:
0
GRANT, RW
APPLIED PHYSICS LETTERS,
1990,
56
(06)
: 557
-
559
[6]
FORMATION AND SCHOTTKY-BARRIER HEIGHT OF AU CONTACTS TO CUINSE2
NELSON, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALABRIA,DEPT PHYS,I-87036 RENDE,ITALY
NELSON, AJ
GEBHARD, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALABRIA,DEPT PHYS,I-87036 RENDE,ITALY
GEBHARD, S
KAZMERSKI, LL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALABRIA,DEPT PHYS,I-87036 RENDE,ITALY
KAZMERSKI, LL
COLAVITA, E
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALABRIA,DEPT PHYS,I-87036 RENDE,ITALY
COLAVITA, E
ENGELHARDT, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALABRIA,DEPT PHYS,I-87036 RENDE,ITALY
ENGELHARDT, M
HOCHST, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALABRIA,DEPT PHYS,I-87036 RENDE,ITALY
HOCHST, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1991,
9
(03):
: 978
-
982
[7]
MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICON
OHDOMARI, I
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OHDOMARI, I
KUAN, TS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KUAN, TS
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
JOURNAL OF APPLIED PHYSICS,
1979,
50
(11)
: 7020
-
7029
[8]
RF SPUTTERED GOLD-AMORPHOUS SILICON SCHOTTKY-BARRIER DIODES
XU, L
论文数:
0
引用数:
0
h-index:
0
机构:
NANKAI UNIV, TIENSTIEN, PEOPLES R CHINA
NANKAI UNIV, TIENSTIEN, PEOPLES R CHINA
XU, L
REINHARD, DK
论文数:
0
引用数:
0
h-index:
0
机构:
NANKAI UNIV, TIENSTIEN, PEOPLES R CHINA
NANKAI UNIV, TIENSTIEN, PEOPLES R CHINA
REINHARD, DK
THOMPSON, MG
论文数:
0
引用数:
0
h-index:
0
机构:
NANKAI UNIV, TIENSTIEN, PEOPLES R CHINA
NANKAI UNIV, TIENSTIEN, PEOPLES R CHINA
THOMPSON, MG
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(06)
: 1004
-
1008
[9]
OPTIMUM BARRIER HEIGHT FOR SCHOTTKY-BARRIER DETECTORS
SHOUSHA, AHM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CAIRO,DEPT ELECTR & ELECT ENGN,CAIRO,EGYPT
UNIV CAIRO,DEPT ELECTR & ELECT ENGN,CAIRO,EGYPT
SHOUSHA, AHM
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1982,
15
(04)
: 669
-
675
[10]
SCHOTTKY-BARRIER DEVICES WITH LOW BARRIER HEIGHT
MACPHERSON, AC
论文数:
0
引用数:
0
h-index:
0
机构:
USN,SOLID STATE DEVICES BRANCH,ELECTR TECHNOL DIV,RES LAB,WASHINGTON,DC 20375
USN,SOLID STATE DEVICES BRANCH,ELECTR TECHNOL DIV,RES LAB,WASHINGTON,DC 20375
MACPHERSON, AC
DAY, HM
论文数:
0
引用数:
0
h-index:
0
机构:
USN,SOLID STATE DEVICES BRANCH,ELECTR TECHNOL DIV,RES LAB,WASHINGTON,DC 20375
USN,SOLID STATE DEVICES BRANCH,ELECTR TECHNOL DIV,RES LAB,WASHINGTON,DC 20375
DAY, HM
PROCEEDINGS OF THE IEEE,
1975,
63
(06)
: 980
-
980
←
1
2
3
4
5
→