Formation of Epitaxial Hf Germanide/Ge Contacts for Schottky Barrier Height Engineering

被引：0
|
作者：
Nakatsuka, Osamu [1 ,2 ]
Suzuki, Akihiro [1 ]
McVittie, James [3 ]
Nishi, Yoshio [3 ]
Zaima, Shigeaki [2 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi, Japan
[3] Stanford Univ, Elect Dept, Stanford, CA 94305 USA
来源：
2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：47 / 48
页数：2
相关论文
共 50 条
  • [41] EFFECT OF THE PRESENCE OF GE IN ER COMPOUND ON THE BARRIER HEIGHT FORMATION OF ER-SI CONTACTS
    WU, CS
    GHAEMMAGHAMI, A
    LAU, SS
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1601 - 1605
  • [42] Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge(001) Schottky contacts
    Yao, H. B.
    Chi, D. Z.
    Li, R.
    Lee, S. J.
    Kwong, D. -L.
    APPLIED PHYSICS LETTERS, 2006, 89 (24)
  • [43] Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact
    Huang, Zhiwei
    Li, Cheng
    Lin, Guangyang
    Lai, Shumei
    Wang, Chen
    Huang, Wei
    Wang, Jianyuan
    Chen, Songyan
    APPLIED PHYSICS EXPRESS, 2016, 9 (02)
  • [44] Extracting the Schottky barrier height from axial contacts to semiconductor nanowires
    Sarpatwari, K.
    Dellas, N. S.
    Awadelkarim, O. O.
    Mohney, S. E.
    SOLID-STATE ELECTRONICS, 2010, 54 (07) : 689 - 695
  • [45] Schottky contacts on passivated GaAs(100) surfaces:: barrier height and reactivity
    Kampen, T
    Schüller, A
    Zahn, DRT
    Biel, B
    Ortega, J
    Pérez, R
    Flores, F
    APPLIED SURFACE SCIENCE, 2004, 234 (1-4) : 341 - 348
  • [46] Barrier height of metal/InP Schottky contacts with interface oxide layer
    Yamagishi, Haruo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 pt 1 (06): : 997 - 1001
  • [47] BARRIER HEIGHT OF METAL/INP SCHOTTKY CONTACTS WITH INTERFACE OXIDE LAYER
    YAMAGISHI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (06): : 997 - 1001
  • [48] METAL CONTACTS TO GAAS WITH 1 EV SCHOTTKY-BARRIER HEIGHT
    WALDROP, JR
    GRANT, RW
    APPLIED PHYSICS LETTERS, 1988, 52 (21) : 1794 - 1796
  • [49] Enhancement of Schottky barrier height in heterodimensional metal-semiconductor contacts
    Ytterdal, T
    Shur, MS
    Hurt, M
    Peatman, WCB
    APPLIED PHYSICS LETTERS, 1997, 70 (04) : 441 - 442
  • [50] Mean barrier height of Pd Schottky contacts on ZnO thin films
    von Wenckstern, H
    Biehne, G
    Rahman, RA
    Hochmuth, H
    Lorenz, M
    Grundmann, M
    APPLIED PHYSICS LETTERS, 2006, 88 (09)
12345