Mean barrier height of Pd Schottky contacts on ZnO thin films

被引：128
|
作者：
von Wenckstern, H [1 ]
Biehne, G [1 ]
Rahman, RA [1 ]
Hochmuth, H [1 ]
Lorenz, M [1 ]
Grundmann, M [1 ]
机构：
[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 09期
关键词：
D O I：
10.1063/1.2180445
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the temperature dependence of the barrier height of high-quality Pd Schottky contacts on (0001)-oriented ZnO thin films by temperature-dependent current-voltage and capacitance-voltage (CV) measurements. The films have been grown by pulsed-laser deposition. The effective Schottky barrier height Phi(B,eff) deduced from the current-voltage measurements was evaluated by considering a Gaussian barrier height distribution with a standard deviation sigma around a mean barrier height Phi(B,m). We determined Phi(B,m)=(1.16 +/- 0.04) eV which agrees well with the value of 1.14 eV determined by CV measurements. The standard deviation is determined to be (134 +/- 10) meV. (c) 2006 American Institute of Physics.
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