Determination of the barrier height of Pt - Ir Schottky nano-contacts on Al-doped ZnO thin films by conductive Atomic Force Microscopy

被引：0
|
作者：
Eduardo-River L, J. [1 ]
Munoz-Aguirre, N. [1 ,3 ]
Juliana Gutierrez-Paredes, G. [1 ]
Tamayo-Meza, P. A. [1 ]
Zapata, Alejandro A. [1 ]
Martinez-Perez, L. [2 ,3 ]
机构：
[1] Inst Politecn Nacl, Escuela Super Ingn Mecan & Elect UA, Secc Estudios Posgrad & Invest, Ave Granjas 682, Cdmx 02250, Mexico
[2] Inst Politecn Nacl, Unidad Profes Interdisciplinaria Ingn & Tecnol Av, Ave IPN 2580, Ticoman 07340, Cdmx, Mexico
[3] IPN, Dept Fis, Ctr Invest & Estudios Avanzados, Mexico City 07351, DF, Mexico
来源：
REVISTA MEXICANA DE FISICA | 2018年 / 64卷 / 06期
关键词：
Schottky barrier height; conductive AFM; I-V Schottky characteristics; Pt Schottky nano-contact on ZnO thin films; electrical properties at nanoscale level; TRANSPORT; DIODES;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
By means of the I-V characteristics measured at room temperature, the height of the Schottky barrier established by the conductive Pt - Ir tip of an Atomic Force Microscope on the aluminum doped ZnO thin films were estimated in the range of 0.58 - 0.64 eV. The ideality factors were in the range of 2.11 - 1.39, respectively. These values are in accordance with those reported by other authors that measured the height of the Pt Schottky barrier on ZnO by means of several methods. The procedure detailed in this work suggests that the scanning time for obtaining I-V Schottky characteristics is of the order of 2 ms.
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收藏
页码：655 / 661
页数：7
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