Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates

被引：37
|
作者：
Han, DD [1 ]
Wang, Y [1 ]
Tian, DY [1 ]
Wang, W [1 ]
Liu, XY [1 ]
Kang, JF [1 ]
Han, RQ [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
MICROELECTRONIC ENGINEERING | 2005年 / 82卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Ni-germanide; Schottky contacts; Ge;
D O I：
10.1016/j.mee.2005.06.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we investigated fabrication and characteristics of germanides Schottky contacts on germanium. Ti- and Ni-germanides were fabricated on n-Ge(1 0 0) substrates by sputtering metal Ti or Ni on Ge followed by a furnace annealing. The influence of annealing temperature on the electrical properties of Ti- and Ni-germanide on n-Ge(1 0 0) substrates was investigated. The low temperature similar to 300 degrees C annealing helped to obtain the optimized Schottky contact characteristics in both Ti-germanide/Ge and Ni-germanide/Ge substrates contacts. The well-behaved Ti-germanides/n-Ge Schottky contact with 0.34 eV barrier height was obtained by using a 300 degrees C annealing process. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：93 / 98
页数：6
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