Fabrication and characteristics of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates

被引：0
|
作者：
Han, DD [1 ]
Wang, X [1 ]
Wang, Y [1 ]
Tian, DY [1 ]
Wang, W [1 ]
Liu, XY [1 ]
Kang, JF [1 ]
Han, RQ [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ti- and Ni-germanides were fabricated on n-Ge (100) substrates by sputtering metal Ti or Ni on Ge followed by a furnace annealing. The impacts of anneal temperature on the material the electrical properties of Ti- and Ni-germanide on n-Ge (100.) substrates were investigated. The low temperature similar to 300 degrees C annealing helps to obtain the optimized Schottky contact characteristics in both Ti-germanide/Ge and Ni-germanide/Ge contacts. The well-behaved Ti-germanides/n-Ge Schottky contacts with 0.34eV barrier height were achieved by using a 300 degrees C annealing process.
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页码：472 / 475
页数：4
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