Schottky-barrier height tuning of Ni and Pt germanide/n-Ge contacts using dopant segregation

被引：4
|
作者：
Mueller, M. [1 ]
Zhao, O. T. [1 ]
Urban, C. [1 ]
Sandow, C. [1 ]
Breuer, U. [2 ]
Mantl, S. [1 ]
机构：
[1] Forschungszentrum Julich, Inst Bio & Nanosyst, Postfach 1913, D-52425 Julich, Germany
[2] Forschungszentrum Julich, Cent Div Analyt Chem, D-52425 Julich, Germany
来源：
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年
关键词：
D O I：
10.1109/ICSICT.2008.4734494
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A systematic study of the Schottky barrier lowering induced by dopant segregation during Ni and Pt germanidation is presented. Both investigated doping species, As and P, segregated at the germanide/Ge interface during germanidation due to the snowplow effect. The effective Schottky-barrier height at 0 K of NiGe/n-Ge reduced from 0.72 eV for diodes without ion implantation to 0.19eV by As segregation and to 0.34 eV by P segregration. The Schottky barrier lowering is more effective in PtGe2/n-Ge contacts, where the effective barrier reduces to 0.05eV by As and to 0.07eV by P segregation.
引用
收藏
页码：153 / +
页数：2
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