Schottky-barrier height tuning of Ni and Pt germanide/n-Ge contacts using dopant segregation

被引：4

作者：

Mueller, M. ^{[1
]}

Zhao, O. T. ^{[1
]}

Urban, C. ^{[1
]}

Sandow, C. ^{[1
]}

Breuer, U. ^{[2
]}

Mantl, S. ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Bio & Nanosyst, Postfach 1913, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Cent Div Analyt Chem, D-52425 Julich, Germany

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

关键词：

D O I：

10.1109/ICSICT.2008.4734494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A systematic study of the Schottky barrier lowering induced by dopant segregation during Ni and Pt germanidation is presented. Both investigated doping species, As and P, segregated at the germanide/Ge interface during germanidation due to the snowplow effect. The effective Schottky-barrier height at 0 K of NiGe/n-Ge reduced from 0.72 eV for diodes without ion implantation to 0.19eV by As segregation and to 0.34 eV by P segregration. The Schottky barrier lowering is more effective in PtGe2/n-Ge contacts, where the effective barrier reduces to 0.05eV by As and to 0.07eV by P segregation.

引用

页码：153 / +

页数：2

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