Quantum confinement in oxide quantum wells

被引:36
|
作者
Stemmer, Susanne [1 ]
Millis, Andrew J. [2 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Columbia Univ, Dept Phys, New York, NY 10027 USA
基金
美国国家科学基金会;
关键词
TRANSMISSION ELECTRON-MICROSCOPY; MOTT-INSULATOR; PEROVSKITES; TRANSITIONS; FILMS; YTIO3;
D O I
10.1557/mrs.2013.265
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Quantum wells created from nanostructured transition metal oxides offer unique possibilities for creating and manipulating quantum states of matter, including novel superconductors, high Curie temperature magnets, controllable metal-insulator transitions, and new topological states. This article explores what is known and conjectured about confined electronic states in oxide quantum wells. Theoretical challenges are reviewed, along with issues arising in the creation of oxide quantum wells. Examples from the current experimental state of the art are summarized, open questions are discussed, and prospects for the future are outlined. The key roles of epitaxial strain and proximity effects are emphasized.
引用
收藏
页码:1032 / 1039
页数:8
相关论文
共 50 条
  • [1] Quantum confinement in oxide quantum wells
    Susanne Stemmer
    Andrew J. Millis
    [J]. MRS Bulletin, 2013, 38 : 1032 - 1039
  • [2] Quantum confinement in transition metal oxide quantum wells
    Choi, Miri
    Lin, Chungwei
    Butcher, Matthew
    Rodriguez, Cesar
    He, Qian
    Posadas, Agham B.
    Borisevich, Albina Y.
    Zollner, Stefan
    Demkov, Alexander A.
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (19)
  • [3] Effect of quantum confinement on impurity hopping in quantum wells
    Keiper, R
    Wang, W
    Zvyagin, IP
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 193 (01): : 113 - 118
  • [4] QUANTUM CONFINEMENT AND HOT-PHONON EFFECTS IN QUANTUM WELLS
    MARCHETTI, MC
    POTZ, W
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1341 - 1345
  • [5] Quantum confinement and band offsets in amorphous silicon quantum wells
    Jarolimek, K.
    de Groot, R. A.
    de Wijs, G. A.
    Zeman, M.
    [J]. PHYSICAL REVIEW B, 2014, 90 (12)
  • [6] Quantum confinement of carriers in the type-I quantum wells structure
    Li, Xinxin
    Deng, Zhen
    Jiang, Yang
    Du, Chunhua
    Jia, Haiqiang
    Wang, Wenxin
    Chen, Hong
    [J]. CHINESE PHYSICS B, 2024, 33 (09)
  • [7] Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells
    Ding, Ding
    Liu, Weiye
    Guo, Jiaping
    Tan, Xinhui
    Zhang, Wei
    Han, Lili
    Wang, Zhaowei
    Gong, Weihua
    Tang, Xiansheng
    [J]. IEEE PHOTONICS JOURNAL, 2023, 15 (03):
  • [8] Control of quantum confinement in metal-clad InAs quantum wells
    Tsujino, S
    Allen, SJ
    Rüfenacht, M
    Thomas, M
    Zhang, JP
    Speck, J
    Eckhause, T
    Gwinn, B
    [J]. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 411 - 412
  • [9] Quantum confinement of carriers in the type-I quantum wells structure
    李欣欣
    邓震
    江洋
    杜春花
    贾海强
    王文新
    陈弘
    [J]. Chinese Physics B., 2024, 33 (09) - 562
  • [10] MAGNETIC MANIFESTATIONS OF CARRIER CONFINEMENT IN QUANTUM WELLS
    AWSCHALOM, DD
    WARNOCK, J
    HONG, JM
    CHANG, LL
    KETCHEN, MB
    GALLAGHER, WJ
    [J]. PHYSICAL REVIEW LETTERS, 1989, 62 (02) : 199 - 202