Control of quantum confinement in metal-clad InAs quantum wells

被引：0

作者：

Tsujino, S ^{[1
]}

Allen, SJ ^{[1
]}

Rüfenacht, M ^{[1
]}

Thomas, M ^{[1
]}

Zhang, JP ^{[1
]}

Speck, J ^{[1
]}

Eckhause, T ^{[1
]}

Gwinn, B ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Inst Quantum Sci Engn & Technol, Santa Barbara, CA 93106 USA

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We explore intersubband optical transitions in InAs quantum wells terminated by various metal-InAs interfaces and demonstrate that electrons can be quantum mechanically confined in InAs quantum well defined by a metal-semiconductor interface. We found that the transmission of electrons at the Pt-InAs interface is sensitively controlled by chemical reaction from highly transmissive (similar to 70%) to highly reflective.

引用

页码：411 / 412

页数：2

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