Quantum confinement in transition metal oxide quantum wells

被引：15

作者：

Choi, Miri ^{[1
]}

Lin, Chungwei ^{[1
]}

Butcher, Matthew ^{[1
]}

Rodriguez, Cesar ^{[2
]}

He, Qian ^{[3
]}

Posadas, Agham B. ^{[1
]}

Borisevich, Albina Y. ^{[3
]}

Zollner, Stefan ^{[2
]}

Demkov, Alexander A. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[2] New Mexico State Univ, Dept Phys, Las Cruces, NM 88003 USA

[3] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 19期

基金：

美国国家科学基金会;

关键词：

OPTICAL-PROPERTIES; SRTIO3; TRANSISTORS;

D O I：

10.1063/1.4921013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the quantum confinement in SrTiO3 (STO) quantum wells (QWs) grown by molecular beam epitaxy. The QW structure consists of LaAlO3 (LAO) and STO layers grown on LAO substrate. Structures with different QW thicknesses ranging from two to ten unit cells were grown and characterized. Optical properties (complex dielectric function) were measured by spectroscopic ellipsometry in the range of 1.0 eV-6.0 eV at room temperature. We observed that the absorption edge was blue-shifted by approximately 0.39 eV as the STO quantum well thickness was reduced to two unit cells. This demonstrates that the energy level of the first sub-band can be controlled by the QW thickness in a complex oxide material. (C) 2015 AIP Publishing LLC.

引用

页数：5

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