Quantum confinement in oxide quantum wells

被引:36
|
作者
Stemmer, Susanne [1 ]
Millis, Andrew J. [2 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Columbia Univ, Dept Phys, New York, NY 10027 USA
基金
美国国家科学基金会;
关键词
TRANSMISSION ELECTRON-MICROSCOPY; MOTT-INSULATOR; PEROVSKITES; TRANSITIONS; FILMS; YTIO3;
D O I
10.1557/mrs.2013.265
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Quantum wells created from nanostructured transition metal oxides offer unique possibilities for creating and manipulating quantum states of matter, including novel superconductors, high Curie temperature magnets, controllable metal-insulator transitions, and new topological states. This article explores what is known and conjectured about confined electronic states in oxide quantum wells. Theoretical challenges are reviewed, along with issues arising in the creation of oxide quantum wells. Examples from the current experimental state of the art are summarized, open questions are discussed, and prospects for the future are outlined. The key roles of epitaxial strain and proximity effects are emphasized.
引用
收藏
页码:1032 / 1039
页数:8
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