Investigation on Body Potential in Cylindrical Gate-All- Around MOSFET

被引：0
|
作者：
Kessi, M. [1 ]
Benfdila, A. [1 ]
Lakhelef, A. [1 ]
Belhimer, L. [1 ]
Djouder, M. [1 ]
机构：
[1] Univ M Mammeri, Micro & Nanotechnol Res Grp MNRG, Fac Elect Engn & Comp Sci, UMMTO DZ, Tizi Ouzou 15000, Algeria
来源：
2019 IEEE 31ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL 2019) | 2019年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cylindrical gate all around (CGAA) MOSFET has been studied and the body potential has been simulated and studied. The center and surface potentials models are studied and a comparison is made between the two potential behaviours for a CGAA MOSFET. Moreover, the channel doping concentration and the band diagrams are obtained using the Finite element numerical method by solving poisson's equation in the cylindrical coordinate system.
引用
收藏
页码：213 / 216
页数：4
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