Numerical Model of Gate-All-Around MOSFET With Vacuum Gate Dielectric for Biomolecule Detection

被引：44
|
作者：
Gautam, Rajni [1 ]
Saxena, Manoj [2 ,3 ]
Gupta, R. S. [4 ]
Gupta, Mridula [1 ]
机构：
[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India
[2] Univ Delhi, Dept Elect, New Delhi 110021, India
[3] Univ Delhi, DDU Coll, New Delhi 110021, India
[4] MAIT, Dept Elect & Commun Engn, New Delhi 10086, India
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 12期
关键词：
ATLAS-3-D; biosensor; dielectric-modulated field-effect transistor (FET) (DMFET); gate-all-around (GAA) MOSFET; vacuum gate dielectric; FIELD-EFFECT TRANSISTOR; STACK;
D O I：
10.1109/LED.2012.2216247
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a dielectric-modulated GAA MOSFET with vacuum gate dielectric is proposed for enhanced sensitivity for label-free detection of neutral and charged biomolecules. We developed an analytical model to model the response of GAA MOSFET in the presence of biomolecules. The model is verified with simulation results of ATLAS-3-D. Results indicate that GAA MOSFET biosensor with vacuum gate dielectric is able to serve as a highly sensitive low-power label-free biosensor along with advantages of robustness, reliability, and CMOS compatibility.
引用
收藏
页码：1756 / 1758
页数：3
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