Electrothermal Modelling of Novel Through-Silicon Carbon Nanotube Bundle Vias (TS-CNTBV)

被引：0
|
作者：
Liu, Yun-Fan [1 ]
Yong, Zheng [1 ]
Jiao, Yan-Song [1 ]
Zhao, Wen-Sheng [1 ]
Yin, Wen-Yan [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Modern Opt Instrument, Ctr Opt & Electromagnet Res, Zhejiang Prov Key Lab Sensing Technol, Hangzhou 310058, Zhejiang, Peoples R China
来源：
2012 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS) | 2012年
关键词：
PERFORMANCE ANALYSIS; INTERCONNECTS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we at first propose an almost-carbon interconnects structure consisting of through-silicon carbon nanotube bundle vias (TS-CNTBV), graphene-based transmission lines (GTL) and metal bumps. In order to characterize its electrical performance, an effective complex conductivity of the CNT bundle is introduced and studied for different temperatures and CNT radii. Further, the TS-CNTBV transmission characteristics are investigated based on its distributed transmission line model, and in particular, effects of metallic bump attached to the TS-CNTBV are considered and treated in an appropriate way.
引用
收藏
页码：53 / 56
页数：4
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