Electrical Modeling of Carbon Nanotube Based Through-Silicon Vias for Three-dimensional ICs

被引：0
|
作者：
Zheng, J. [1 ]
Gao, X. [1 ]
Zhao, W. -S. [1 ]
Wang, G. [1 ]
机构：
[1] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Microelect CAD Ctr Sch Elect & Informat, Minist Educ, Hangzhou 310018, Zhejiang, Peoples R China
来源：
2016 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS) | 2016年
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, through-silicon vias (TSV) filled with carbon nanotube (CNT) bundle are investigated based on the equivalent circuit model. The concept of effective complex conductivity is employed for accurately characterizing the impacts of CNT kinetic inductance. The high frequency electrical performance of CNT based TSVs is captured and analyzed. Finally, the TSVs filled with a composite of Cu and CNT are discussed.
引用
收藏
页码：2594 / 2597
页数：4
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