Investigation of Carbon Nanotube-Based Through-Silicon Vias for PDN Applications

被引：11
|
作者：
Jin, Jing [1 ]
Zhao, Wen-Sheng [2 ]
Wang, Da-Wei [1 ]
Chen, Hong-Sheng [3 ]
Li, Er-Ping [3 ]
Yin, Wen-Yan [1 ,4 ]
机构：
[1] Zhejiang Univ, State Key Lab Modern Opt Instrumentat, Coll Opt Sci & Engn, Hangzhou 310058, Zhejiang, Peoples R China
[2] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Sch Elect & Informat, Hangzhou 310018, Zhejiang, Peoples R China
[3] Zhejiang Univ, Innovat Inst Electromagnet Informat & Elect Integ, Zhejiang Prov Key Lab Adv Micronano Elect Devices, Hangzhou 310058, Zhejiang, Peoples R China
[4] Zhejiang Prov Key Lab Adv Micronano Elect Devices, Innovat Inst Electromagnet Informat & Elect Integ, Hangzhou 310058, Zhejiang, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 2018年 / 60卷 / 03期
基金：
中国国家自然科学基金;
关键词：
Carbon nanotube (CNT); CNT diameter; CNT filling ratio; impedance; kinetic inductance; power distribution network (PDN); temperature; through-silicon via (TSV); COMPUTATIONAL ELECTROMAGNETICS CEM; SELECTIVE VALIDATION FSV; MODEL; TSV; INTERCONNECTS; NETWORKS; ARRAY;
D O I：
10.1109/TEMC.2017.2737022
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a comprehensive investigation of the impedance characteristics of power distribution networks (PDNs) made of carbon nanotube through-silicon vias (CNT-TSVs). The equivalent circuit model of the CNT-TSV array is presented and validated through three-dimensional full-wave electromagnetic simulator up to 100 GHz. By virtue of the circuit model, the inductive properties of CNT-TSVs are characterized and compared for various physical parameters. Then, the PDN impedance characteristics of multiple stacked chip-PDNs with CNT-TSVs are captured and evaluated. It is found that the large CNT kinetic inductance may limit the PDN frequency range. Therefore, the fabrication of CNT-TSVs should be improved to increase the CNT density and reduce the contact resistance.
引用
收藏
页码：738 / 746
页数：9
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