Through-Silicon Vias Filled With Densified and Transferred Carbon Nanotube Forests

被引：56

作者：

Wang, Teng ^{[1
]}

Chen, Si ^{[1
,2
,3
]}

Jiang, Di ^{[1
]}

Fu, Yifeng ^{[1
]}

Jeppson, Kjell ^{[1
]}

Ye, Lilei ^{[4
]}

Liu, Johan ^{[1
,2
,3
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, SE-41296 Gothenburg, Sweden

[2] Shanghai Univ, Sch Mech Engn & Automat, Key Lab New Displays & Syst Applicat, Shanghai 200072, Peoples R China

[3] Shanghai Univ, Sch Mech Engn & Automat, SMIT Ctr, Shanghai 200072, Peoples R China

[4] SHT Smart High Tech AB, SE-41296 Gothenburg, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 03期

基金：

美国国家科学基金会;

关键词：

Carbon nanotubes (CNTs); densification; interconnects; through-silicon vias (TSVs); transfer;

D O I：

10.1109/LED.2011.2177804

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Through-silicon vias (TSVs) filled with densified and transferred carbon nanotube (CNT) forests are experimentally demonstrated. The filling is achieved by a postgrowth low-temperature transfer process at 200 degrees C instead of direct CNT growth in the vias normally requiring high temperature. A vapor densification method is also applied to densify the as-grown CNT forests, which allows for packing more CNTs in the vias to reduce their resistances. CNT-filled TSVs fabricated based on these two key steps show CMOS compatibility and roughly one order of magnitude reduction in resistivity compared to the TSVs filled with as-grown undensified CNT forests.

引用

页码：420 / 422

页数：3

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