Graphene Field-Effect Transistor as a Probe of Doping by Adsorbed Oxygen Molecules

被引：0

作者：

Blechta, Vaclav ^{[1
,2
]}

Mergl, Martin ^{[1
]}

Drogowska, Karolina ^{[1
]}

Kucera, Lukas ^{[1
]}

Vales, Vaclav ^{[1
]}

Cervenka, Jiri ^{[3
]}

Kalbac, Martin ^{[1
]}

机构：

[1] J Heyrovsky Inst Phys Chem AS CR, Vvi, Dolejskova 3, Prague 18223 8, Czech Republic

[2] Palacky Univ, Fac Sci, Dept Phys Chem, Tr 17 Listopadu 1192-12, Olomouc 77146, Czech Republic

[3] Inst Phys AS CR, Vvi, Cukrovarnicka 10-112, Prague 16200 6, Czech Republic

来源：

XXXVI MODERNI ELEKTROCHEMICKE METODY | 2016年

关键词：

Graphene; Sensor; Transistor; SENSORS; FILMS;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graphene has high potential in chemical sensing, thus understanding adsorption and charge transfer between graphene and adsorbed molecules is essential. We show that graphene field-effect transistor exhibits a moderate sensoric response towards oxygen at temperature of 150 degrees C. Field-effect transistors serve as a tool to probe electronic properties of graphene. We demonstrate that adsorption of oxygen molecules onto graphene leads to an upshit of Dirac point and light changes in mobility of charge carriers.

引用

页码：18 / 22

页数：5

共 50 条

[31] Electronic detection of nucleic acid molecules with a field-effect transistor
Ingebrandt, S
Han, YH
Sakkari, MR
Stockmann, R
Belinskyy, O
Offenhäusser, A
SEMICONDUCTOR MATERIALS FOR SENSING, 2005, 828 : 307 - 312
[32] FIELD-EFFECT TRANSISTOR
GULDENPFENNIG, P
ELEKTROTECHNISCHE ZEITSCHRIFT B-AUSGABE, 1968, 20 (17): : 474 - +
[33] Effect of "Mexican Hat" on Graphene Bilayer Field-Effect Transistor Characteristics
Svintsov, Dmitry
Vyurkov, Vladimir
Ryzhii, Victor
Otsuji, Taiichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (07)
[34] Irradiation Effect on Back-Gate Graphene Field-Effect Transistor
Chen, Xinlu
Srivastava, Ashok
Sharma, Ashwani K.
Mayberry, Clay
SENSORS AND SYSTEMS FOR SPACE APPLICATIONS X, 2017, 10196
[35] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Britnell, L.
Gorbachev, R. V.
Jalil, R.
Belle, B. D.
Schedin, F.
Mishchenko, A.
Georgiou, T.
Katsnelson, M. I.
Eaves, L.
Morozov, S. V.
Peres, N. M. R.
Leist, J.
Geim, A. K.
Novoselov, K. S.
Ponomarenko, L. A.
SCIENCE, 2012, 335 (6071) : 947 - 950
[36] Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels
Sano, Eiichi
Otsuji, Taiichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (09) : 0916051 - 0916053
[37] Super tiny nanoscale graphene nanoribbon field-effect transistor
Yi Zhijie
Shao Qingyi
Zhang Juan
CHINESE JOURNAL OF PHYSICS, 2019, 59 : 572 - 577
[38] Plasmonic and bolometric terahertz detection by graphene field-effect transistor
Muraviev, A. V.
Rumyantsev, S. L.
Liu, G.
Balandin, A. A.
Knap, W.
Shur, M. S.
APPLIED PHYSICS LETTERS, 2013, 103 (18)
[39] Investigation of electronic properties of graphene/Si field-effect transistor
Xiying Ma
Weixia Gu
Jiaoyan Shen
Yunhai Tang
Nanoscale Research Letters, 7
[40] Ultralow noise field-effect transistor from multilayer graphene
Pal, Atindra Nath
Ghosh, Arindam
APPLIED PHYSICS LETTERS, 2009, 95 (08)

← 1 2 3 4 5 →