Effect of "Mexican Hat" on Graphene Bilayer Field-Effect Transistor Characteristics

被引：3

作者：

Svintsov, Dmitry ^{[1
,2
]}

Vyurkov, Vladimir ^{[1
,2
]}

Ryzhii, Victor ^{[3
,5
]}

Otsuji, Taiichi ^{[4
,5
]}

机构：

[1] Russian Acad Sci, Inst Phys & Technol, Moscow 117218, Russia

[2] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia

[3] Univ Aizu, Fukushima 9658580, Japan

[4] Tohoku Univ, RIEC, Sendai, Miyagi 9808577, Japan

[5] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1070075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 07期

基金：

日本科学技术振兴机构; 俄罗斯基础研究基金会;

关键词：

D O I：

10.1143/JJAP.50.070112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ballistic model of a graphene bilayer field-effect transistor (GBL FET) was developed. It incorporates the exact graphene bilayer electronic spectrum reminding a "Mexican hat". The isotropic minimum shifted from the center of a band results in a conductance step at low temperature which was so far known for one-dimensional conductors due to conductance quantization. At room temperature a GBL FET exhibits an extremely high transconductance in ON-state. It makes a GBL FET promising for high-frequency analog circuits. We also point out to possibility of electron localization inside the channel on the top of potential barrier. (C) 2011 The Japan Society of Applied Physics

引用

页数：6

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