Device characteristics and tight binding based modeling of bilayer graphene field-effect transistor

被引：4
|
作者：
Ghobadi, N. [1 ,2 ]
Abdi, Y. [1 ]
机构：
[1] Univ Tehran, Dept Phys, Nanophys Res Lab, Tehran, Iran
[2] Univ Tehran, ECE Dept, Tehran, Iran
来源：
CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 06期
关键词：
Tight binding; Bilayer graphene; Field-effect transistor; MINIMAL CONDUCTIVITY; NANORIBBONS; TRANSPORT; STACKING; GRAPHITE; BANDGAP;
D O I：
10.1016/j.cap.2013.02.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work the device characteristic of bilayer graphene MOSFET is investigated by calculation of transmission coefficient using tight-binding method. The real shape of applied potential on the bilayer graphene was included in the tight binding calculation. As obtained transmission coefficient is used to explore the current-voltage characteristics of the device in both on and off regimes. Electrical behavior of the device was obtained for different gate and drains voltages and channel length. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：1082 / 1089
页数：8
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