Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels

被引：11

作者：

Sano, Eiichi ^{[1
,3
]}

Otsuji, Taiichi ^{[2
,3
]}

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo 1070075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 09期

基金：

日本科学技术振兴机构;

关键词：

CARBON;

D O I：

10.1143/JJAP.48.091605

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A potential difference between the two layers of bilayer graphene caused by charge doping and/or an applied gate field can open a bandgap. In this paper, bandgap and charge controllability in graphene field-effect transistors (GFETs) with doped bilayer graphene channels is clarified by solving a one-dimensional Poisson's equation, including electron and hole concentrations derived from a tight-binding Hamiltonian. The calculations show that a high doping concentration of 10(13) cm(-2) is required to produce a bandgap of 0.3 eV and that this degrades the charge controllability in GFETs. (C) 2009 The Japan Society of Applied Physics

引用

页码：0916051 / 0916053

页数：3

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