Graphene Field-Effect Transistor as a Probe of Doping by Adsorbed Oxygen Molecules

被引：0

作者：

Blechta, Vaclav ^{[1
,2
]}

Mergl, Martin ^{[1
]}

Drogowska, Karolina ^{[1
]}

Kucera, Lukas ^{[1
]}

Vales, Vaclav ^{[1
]}

Cervenka, Jiri ^{[3
]}

Kalbac, Martin ^{[1
]}

机构：

[1] J Heyrovsky Inst Phys Chem AS CR, Vvi, Dolejskova 3, Prague 18223 8, Czech Republic

[2] Palacky Univ, Fac Sci, Dept Phys Chem, Tr 17 Listopadu 1192-12, Olomouc 77146, Czech Republic

[3] Inst Phys AS CR, Vvi, Cukrovarnicka 10-112, Prague 16200 6, Czech Republic

来源：

XXXVI MODERNI ELEKTROCHEMICKE METODY | 2016年

关键词：

Graphene; Sensor; Transistor; SENSORS; FILMS;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graphene has high potential in chemical sensing, thus understanding adsorption and charge transfer between graphene and adsorbed molecules is essential. We show that graphene field-effect transistor exhibits a moderate sensoric response towards oxygen at temperature of 150 degrees C. Field-effect transistors serve as a tool to probe electronic properties of graphene. We demonstrate that adsorption of oxygen molecules onto graphene leads to an upshit of Dirac point and light changes in mobility of charge carriers.

引用

页码：18 / 22

页数：5

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