Irradiation Effect on Back-Gate Graphene Field-Effect Transistor

被引：1

作者：

Chen, Xinlu ^{[1
]}

Srivastava, Ashok ^{[1
]}

Sharma, Ashwani K. ^{[2
]}

Mayberry, Clay ^{[2
]}

机构：

[1] Louisiana State Univ, Div Elect & Comp Engn, Baton Rouge, LA 70803 USA

[2] AFRL RVSE, Elect Fdn Grp, 3550 Aberdeen Ave SE, Kirtland AFB, NM 87117 USA

来源：

SENSORS AND SYSTEMS FOR SPACE APPLICATIONS X | 2017年 / 10196卷

关键词：

Irradiation Effect; Graphene FET; Oxide-Graphene Interface; I-V Characteristics; DEVICES; MODEL;

D O I：

10.1117/12.2258096

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

The effects of irradiations on MOSFET and bipolar junction transistors are well known though irradiation mechanisms in two-dimensional graphene and related devices are still being investigated. In this work, we investigate irradiation mechanism based on a semi-empirical model for the graphene back-gate transistor and quantitatively analyze the irradiation influences on electrical properties of the device structure. The irradiation shifts the current which changes the region of device operation, degrades the mobility and increases the channel resistance which can increase the power dissipation. The main mechanism causing the degradation in performance of devices is the oxide trap charges near the SiO2/graphene interface and graphene layer traps charges.

引用

页数：9

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