A Dual-Mode Programing Nonvolatile Floating-Gate Memory with Convertible Ohmic and Schottky Contacts

被引：1

作者：

Zhang, Chi ^{[1
,2
]}

Ning, Jing ^{[1
,2
]}

Wang, Boyu ^{[1
,2
]}

Wang, Dong ^{[1
,2
,3
]}

Zhang, Jincheng ^{[1
,2
]}

Hao, Yue ^{[1
,2
]}

机构：

[1] Xidian Univ, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China

[2] Xidian Univ, Shaanxi Joint Key Lab Graphene, Xian 710071, Peoples R China

[3] Xidian Wuhu Res Inst, Wuhu 241000, Peoples R China

来源：

ADVANCED ELECTRONIC MATERIALS | 2024年 / 10卷 / 03期

关键词：

dual-mode processing program; floating-gate field-effect transistor; nonvolatile memory; WS2; HETEROSTRUCTURES; GRAPHENE;

D O I：

10.1002/aelm.202300503

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Research on van der Waals heterostructures based on stacked two-dimensional atomic thickness crystals has received considerable attention because of their unique characters and great potential applications in flexible transparent electronics and optoelectronics. In this study, a nonvolatile memory device with a few-layer bipolar material WS2 as channel and charge-trapping layers is designed with a floating-gate structure in which charges (electrons and holes) can be stored in the charge-trapping layer using a dual-mode processing program by changing the metal-semiconductor contact type. The device exhibits different programming currents during programming, in particular, the device has a low programming current for programming voltages (<)20 V. Moreover, the heterostructure exhibits a remarkable long retention time (approximate to 10,000 s), with no apparent degradation and a strong endurance, retaining its original performance even after 1,000 programming/erasing cycles. This study proposes a novel method for reducing power consumption while programming to facilitate artificial synapse applications.

引用

页数：6

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