Solution Processed Organic Transistor Nonvolatile Memory With a Floating-Gate of Carbon Nanotubes

被引：18

作者：

Wang, Guodong ^{[1
]}

Liu, Xiaolian ^{[1
]}

Wang, Wei ^{[2
]}

机构：

[1] Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454000, Peoples R China

[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Jilin, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 01期

关键词：

Organic field-effect transistor; floating-gate; nonvolatile memory; successive solution processing; LOW-VOLTAGE; GOLD NANOPARTICLES; FLASH MEMORY; DEVICES; SEMICONDUCTOR; DIELECTRICS; ELECTRETS; RETENTION; TRANSPORT; POLYMERS;

D O I：

10.1109/LED.2017.2774826

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, an organic field-effect transistor nonvolatile memory (NVM), based on single-walled carbon nanotubes (SWNTs) as a nano floating-gate, is demonstrated, for which a four-layer stacked core architecture was processed by following the sequential solution spin-coating method. The SWNTs, separated by spin-coating, are distributed in the matrix of copolymer poly (styrene-block-paraphenylene) to act as the charge trapping sites. The memory of the floating-gate organic transistor so prepared exhibits excellent NVM characteristics, with a large memory window of 26.7 V, memory on/off ratio larger than 103, stable charge storage retention capability for over 3 x 10(4) s with a memory on/off ratio over 10(2), and the reliable memory endurance property of over 500 Hz.

引用

页码：111 / 114

页数：4

共 50 条

[1] Molecular floating-gate organic nonvolatile memory with a fully solution processed core architecture
Wu, Chao
Wang, Wei
Song, Junfeng
[J]. APPLIED PHYSICS LETTERS, 2016, 109 (22)
[2] Solution Processed Top-Gate High-Performance Organic Transistor Nonvolatile Memory With Separated Molecular Microdomains Floating-Gate
Wu, Chao
Wang, Wei
Song, Junfeng
[J]. IEEE ELECTRON DEVICE LETTERS, 2017, 38 (05) : 641 - 644
[3] Nanoparticle floating-gate transistor memory based on solution processed ambipolar organic semiconductor
Sun, Sheng
Zhang, Shengdong
[J]. 2020 INTERNATIONAL CONFERENCE ON ENERGY, ENVIRONMENT AND BIOENGINEERING (ICEEB 2020), 2020, 185
[4] Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer
Xu, Ting
Guo, Shuxu
Xu, Meili
Li, Shizhang
Xie, Wenfa
Wang, Wei
[J]. APPLIED PHYSICS LETTERS, 2018, 113 (24)
[5] Floating-gate nanofibrous electret arrays for high performance nonvolatile organic transistor memory devices
Shi, Naien
Liu, Dong
Jin, Xiaolei
Wu, Wandan
Zhang, Jun
Yi, Mingdong
Xie, Linghai
Guo, Fengning
Yang, Lei
Ou, Changjin
Xue, Wei
Huang, Wei
[J]. ORGANIC ELECTRONICS, 2017, 49 : 218 - 225
[6] Intrinsic mismatch between floating-gate nonvolatile memory cell and equivalent transistor
Duane, Russell
Rafhay, Quentin
Beug, M. Florian
van Duuren, Michiel
[J]. IEEE ELECTRON DEVICE LETTERS, 2007, 28 (05) : 440 - 442
[7] Electrically programmable multilevel nonvolatile memories based on solution-processed organic floating-gate transistors
Higashinakaya, Miho
Nagase, Takashi
Abe, Hayato
Hattori, Reitaro
Tazuhara, Shion
Kobayashi, Takashi
Naito, Hiroyoshi
[J]. APPLIED PHYSICS LETTERS, 2021, 118 (10)
[8] Organic thin-film transistor memory with Ag floating-gate
Wang, Wei
Ma, Dongge
Gao, Qiang
[J]. MICROELECTRONIC ENGINEERING, 2012, 91 : 9 - 13
[9] NEW APPROACH FOR FLOATING-GATE MOS NONVOLATILE MEMORY
LEE, HS
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 475 - 476
[10] Multilevel memory characteristics by light-assisted programming in floating-gate organic thin-film transistor nonvolatile memory
Ying, Jun
Han, Jinhua
Xiang, Lanyi
Wang, Wei
Xie, Wenfa
[J]. CURRENT APPLIED PHYSICS, 2015, 15 (07) : 770 - 775

← 1 2 3 4 5 →