NEW APPROACH FOR FLOATING-GATE MOS NONVOLATILE MEMORY

被引：9
|
作者：
LEE, HS [1 ]
机构：
[1] GM CORP,RES LABS,DEPT ELECTR,WARREN,MI 48090
来源：
APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 07期
关键词：
D O I：
10.1063/1.89746
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：475 / 476
页数：2
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