A Monolithically Integrable Reconfigurable Antenna Based on Large-Area Electronics

被引:2
|
作者
Wu, Can [1 ]
Ma, Yue [1 ]
Venkatesh, Suresh [2 ]
Mehlman, Yoni [1 ]
Ozatay, Murat [1 ]
Wagner, Sigurd [1 ]
Sturm, James C. [1 ]
Verma, Naveen [1 ]
机构
[1] Princeton Univ, Dept Elect & Comp Engn, Princeton, NJ 08544 USA
[2] North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA
关键词
Internet of Things (IoT); large-area electronics (LAE); reconfigurable antenna; thin-film transistor (TFT); wireless sensing; THIN-FILM TRANSISTORS; RADIATION-PATTERN; QUALITY FACTOR; INTERNET; FREQUENCY; INDUCTORS; DESIGN; IMPROVEMENT; CIRCUITS; CONTACT;
D O I
10.1109/JSSC.2023.3322905
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reconfigurable antennas introduce unique and dynamic system capabilities for wireless communication and sensing, by enabling controllable radiation pattern, frequency response, and polarization of electromagnetic (EM) waves. The antenna's physical dimensions are critical to enhancing control of radiative characteristics, making it necessary to distribute RF control devices across a large-area aperture. Previous reconfigurable antennas have been limited in scale and performance by the need to assemble discrete active components. Large-area electronics (LAE) is a technology that can enable monolithic reconfigurable antennas, with flexible and large form factors. However, conventionally the speed of LAE, specifically of thin-film transistors (TFTs), has been restricted to 10-100 MHz. In this work, a reconfigurable antenna based on LAE RF TFTs is achieved through a combination of: 1) materials and device enhancements pushing fundamental TFT performance metrics to the giga-Hertz regime and 2) an architecture that employs the TFTs as passive switches, rather than active amplifiers, to enable aggressive biasing for high-frequency operation, yet within the breakdown limits. A 9 x 9 cm(2) reconfigurable antenna consisting of an 11 x 11 array of metal patches as sub-radiators controlled by 208 TFT-based RF switches is demonstrated. Far-field and S-parameter measurements show reconfigured beam steering by 90(degrees) and resonant-frequency tuning by 200 MHz.
引用
收藏
页码:1475 / 1485
页数:11
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