Large-area plastic nanogap electronics enabled by adhesion lithography

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作者
James Semple
Dimitra G. Georgiadou
Gwenhivir Wyatt-Moon
Minho Yoon
Akmaral Seitkhan
Emre Yengel
Stephan Rossbauer
Francesca Bottacchi
Martyn A. McLachlan
Donal D. C. Bradley
Thomas D. Anthopoulos
机构
[1] Imperial College London,Department of Physics & Centre for Plastic Electronics
[2] King Abdullah University of Science and Technology (KAUST),Division of Physical Sciences and Engineering
[3] Imperial College London,Department of Materials & Centre for Plastic Electronics
[4] Exhibition Road,Departments of Engineering Science and Physics and Division of Mathematical, Physical and Life Sciences
[5] South Kensington,undefined
[6] Oxford University,undefined
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摘要
Large-area manufacturing of flexible nanoscale electronics has long been sought by the printed electronics industry. However, the lack of a robust, reliable, high throughput and low-cost technique that is capable of delivering high-performance functional devices has hitherto hindered commercial exploitation. Herein we report on the extensive range of capabilities presented by adhesion lithography (a-Lith), an innovative patterning technique for the fabrication of coplanar nanogap electrodes with arbitrarily large aspect ratio. We use this technique to fabricate a plethora of nanoscale electronic devices based on symmetric and asymmetric coplanar electrodes separated by a nanogap < 15 nm. We show that functional devices including self-aligned-gate transistors, radio frequency diodes and rectifying circuits, multi-colour organic light-emitting nanodiodes and multilevel non-volatile memory devices, can be fabricated in a facile manner with minimum process complexity on a range of substrates. The compatibility of the formed nanogap electrodes with a wide range of solution processable semiconductors and substrate materials renders a-Lith highly attractive for the manufacturing of large-area nanoscale opto/electronics on arbitrary size and shape substrates.
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