A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology

被引：0

作者：

王伟 ^{[1
]}

黄北举 ^{[1
]}

董赞 ^{[1
]}

郭维廉 ^{[2
]}

陈弘达 ^{[1
]}

机构：

[1] State Key Laboratory for Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

[2] School of Information and Communication,Tianjin Polytechnic University

来源：

Journal of Semiconductors | 2010年 / 31卷 / 05期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

MOS-NDR; CMOS; resonant tunneling diode; monostable-bistable transition logic element; flexible logic gate;

D O I：

暂无

中图分类号：

TN32 [半导体三极管（晶体管）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A MOS-NDR(negative differential resistance) transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors(nMOSFETs) is fabricated in standard 0.35μm CMOS technology.This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD(resonant tunneling diode) in current-voltage characteristics.At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor,a flexible logic circuit is realized in this work,which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor.It turns out that MOS-NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.

引用

页码：102 / 105

页数：4

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