A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology

被引:0
|
作者
王伟 [1 ]
黄北举 [1 ]
董赞 [1 ]
郭维廉 [2 ]
陈弘达 [1 ]
机构
[1] State Key Laboratory for Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences
[2] School of Information and Communication,Tianjin Polytechnic University
基金
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词
MOS-NDR; CMOS; resonant tunneling diode; monostable-bistable transition logic element; flexible logic gate;
D O I
暂无
中图分类号
TN32 [半导体三极管(晶体管)];
学科分类号
0805 ; 080501 ; 080502 ; 080903 ;
摘要
A MOS-NDR(negative differential resistance) transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors(nMOSFETs) is fabricated in standard 0.35μm CMOS technology.This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD(resonant tunneling diode) in current-voltage characteristics.At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor,a flexible logic circuit is realized in this work,which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor.It turns out that MOS-NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.
引用
收藏
页码:102 / 105
页数:4
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