DC Analysis of a MOS based NDR Circuit

被引：0
|
作者：
Sarkar, Mili [1 ]
Chowdhury, Sabarno [1 ]
Chowdhury, Subhajit Dutta [1 ]
Choudhuri, Chayanika Dhar [1 ]
Das, Debarshi [1 ]
Basu, Megha [1 ]
机构：
[1] Inst Engn & Management, Dept Elect & Commun Engn, Kolkata, W Bengal, India
来源：
7TH IEEE ANNUAL INFORMATION TECHNOLOGY, ELECTRONICS & MOBILE COMMUNICATION CONFERENCE IEEE IEMCON-2016 | 2016年
关键词：
Negative Differential Resistor (NDR); NMOS; DC analysis;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The DC analysis of a Metal Oxide Semiconductor Field Effect Transistor based negative differential resistor (NDR) is investigated. V-I characteristic of NDR is obtained by adjusting the parameters of NMOS transistors. Here the NDR circuit exhibits lambda type V-I characteristic. The circuit is easy to fabricate as all the components used here are NMOS. To study the characteristic curve of the NDR circuit CADENCE software is used. The circuit is designed based on the standard 0.18um technology. Analytical DC analysis is verified by MATLAB.
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页数：6
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