Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

被引：0

作者：

许晟瑞 ^{[1
]}

郝跃 ^{[1
]}

张进成 ^{[1
]}

薛晓咏 ^{[1
]}

李培咸 ^{[2
]}

李建婷 ^{[3
]}

林志宇 ^{[1
]}

刘子扬 ^{[1
]}

马俊彩 ^{[1
]}

贺强 ^{[2
]}

吕玲 ^{[1
]}

机构：

[1] Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University

[2] Zoomview Oprtoelectronic

[3] School of Technical Physics, Xidian University

来源：

Chinese Physics B | 2011年 / 20卷 / 10期

基金：

中央高校基本科研业务费专项资金资助; 中国国家自然科学基金;

关键词：

crystal morphology; nonpolar GaN; Raman; metal-organic chemical vapour deposition;

D O I：

暂无

中图分类号：

TN304.2 [化合物半导体];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane GaN are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief.

引用

页码：421 / 425

页数：5

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