Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphire

被引：0
|
作者：
Kroeger, R. [1 ]
Paskova, T. [1 ]
Rosenauer, A. [1 ]
机构：
[1] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 2007 | 2008年 / 120卷
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The defect structure in a-plane GaN films grown on r-plane sapphire distinguishes itself significantly from the one found in c-plane GaN. Transmission electron microscopy studies oil a-plane GaN films grown by hydride vapour phase epitaxy reveal basal plane stacking faults, with a density in the range of 10(5) cm(-1) as a major planar defect in this type of growth. In addition, prismatic and pyramidal stacking faults were found lying in the {1 - 100} and {1 - 102) planes. The non-basal plane stacking faults are found in conjunction with nanopipe-like voids emerging at the film/substrate interface. It is suggested that the formation of the prismatic and pyramidal stacking faults is caused by interfacial strain during the early stage of growth.
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页码：49 / 52
页数：4
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