Lateral epitaxial overgrowth of fully coalesced a-plane GaN on r-plane sapphire

被引：56

作者：

Chen, CQ ^{[1
]}

Yang, JW ^{[1
]}

Wang, HM ^{[1
]}

Zhang, JP ^{[1
]}

Adivarahan, V ^{[1
]}

Gaevski, M ^{[1
]}

Kuokstis, E ^{[1
]}

Gong, Z ^{[1
]}

Su, M ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 6B期

关键词：

ELOG; a-plane; GaN; non-polar; wing tilt; stimulated emission;

D O I：

10.1143/JJAP.42.L640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fully coalesced epitaxial laterally overgrown a-plane GaN films were characterized for their structural and optical quality. The films had a very smooth surface with a root mean square roughness as low as 4.6 Angstrom for a 5 mum x 5 mum atomic force microscope scan area. They exhibited a wing tilt of only 0.27degrees and optically pumped stimulated emission, which establish their high structural and optical quality. These non-polar films are ideal for fabricating high-efficiency optoelectronic and electronic devices.

引用

页码：L640 / L642

页数：3

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