Effect of Thermal Annealing on a-plane GaN Grown on r-plane Sapphire

被引：0
|
作者：
Ko, Tsung-Shine [1 ,2 ,3 ]
Lu, Tien-Chang [2 ,3 ]
Chen, Jung-Ron [2 ,3 ]
Ou, Sin-Liang [4 ]
Chang, Chia-Ming [2 ,3 ]
Kuo, Hau-Chung [2 ,3 ]
Lin, Der-Yuh [1 ]
机构：
[1] Natl Changhua Univ Educ, Dept Elect Engn, 1 Jin De Rd, Changhua 500, Taiwan
[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30050, Taiwan
[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan
[4] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan
来源：
2014 IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) | 2014年
关键词：
non-polar; GaN; annealing; threading dislocation; stack fault; CHEMICAL-VAPOR-DEPOSITION; POLARIZATION; NITRIDES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 degrees C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5x10(10) cm(-2) to 1.5x10(10) cm(-2) along [0001] GaN and stacking faults were decreased from 8.7x 10(5) cm(-1) to 4.8x 10(5) cm(-1) after the sample was annealed at 1000 degrees C. Room temperature photo luminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.
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页数：4
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