Highly doped p-type a-plane GaN grown on r-plane sapphire substrate

被引：0

作者：

Tsuchiya, Y. ^{[1
]}

Okadome, Y. ^{[1
]}

Furukawa, H. ^{[1
]}

Honshio, A. ^{[1
]}

Miyake, Y. ^{[1
]}

Kawashima, T. ^{[1
]}

Iwaya, M. ^{[1
]}

Kamiyama, S. ^{[1
]}

Amano, H. ^{[1
]}

Akasaki, I. ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Century COE Program NanoFactory 21, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan

来源：

GAN, AIN, INN AND RELATED MATERIALS | 2006年 / 892卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mg-doped p-type a-plane GaN films were grown on unintentionally doped a-plane GaN templates by metalorganic vapor phase epitaxy (MOVPE). The Mg concentration in a-plane GaN increased with increasing Mg source gas flow rate. A maximum hole concentration of 2.0 x 10(18) cm(-3) with a hole mobility of 4.5 cm(2)/Vs and resistivity of 0.7 Omega Ycm were achieved. The activation ratio was 5.0 x 10(-2). It was found that a maximum hole concentration in p-type a-plane GaN was higher than that in p-type c-plane GaN. The activation energy of Mg acceptors in p-type a-plane GaN with the maximum hole concentration was found to be 118 meV by temperature-dependent Hall-effect measurement.

引用

页码：423 / +

页数：3

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