Control of p-type conduction in a-plane GaN grown on sapphire r-plane substrate

被引：40

作者：

Tsuchiya, Y ^{[1
]}

Okadome, Y ^{[1
]}

Honshio, A ^{[1
]}

Miyake, Y ^{[1
]}

Kawashima, T ^{[1
]}

Iwaya, M ^{[1
]}

Kamiyama, S ^{[1
]}

Amano, H ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, 21st Century COE Program Nanofactory, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 50-52期

关键词：

a-plane GaN; p-type; Mg; Hall-effect measurement; PL; r-plane sapphire;

D O I：

10.1143/JJAP.44.L1516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mg-doped p-type a-plane GaN films were grown on high-quality unintentionally doped GaN on +0.5 degrees-off r-plane sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A maximum hole concentration of 2.0 x 10(18) cm(-3) was reproducibly achieved at room temperature, which was higher than the maximum hole concentration of p-type c-plane GaN. The activation energy of Mg acceptors in p-type a-plane GaN with a hole concentration of 2.0 x 10(18) cm(-3) was found to be 118 meV by temperature-dependent Hall-effect measurement.

引用

页码：L1516 / L1518

页数：3

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