Fundamental understanding of quantum confinement effect on gate oxide reliability for gate-all around field-effect transistor

被引：0
|
作者：
Li, Xufan [1 ,2 ]
Huang, Shijie [1 ]
Wang, Jiawei [1 ]
Wang, Lingfei [1 ,2 ]
Li, Ling [1 ,2 ]
机构：
[1] Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing,100029, China
[2] University of Chinese Academy of Sciences, Beijing,100049, China
来源：
Journal of Applied Physics | / 136卷 / 23期
关键词：
All Open Access; Hybrid Gold;
D O I：
10.1063/5.0229625
中图分类号：
学科分类号：
摘要：
26
引用
收藏
相关论文
共 50 条
  • [41] A 30-nm-gate field-effect transistor
    Obolenskii, SV
    Kitaev, MA
    TECHNICAL PHYSICS LETTERS, 2000, 26 (05) : 408 - 409
  • [42] Double-gate organic field-effect transistor
    Morana, M
    Bret, G
    Brabec, C
    APPLIED PHYSICS LETTERS, 2005, 87 (15) : 1 - 3
  • [43] P-COLUMN GATE FIELD-EFFECT TRANSISTOR
    ASAI, K
    ISHII, Y
    KAWASAKI, Y
    KURUMADA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 235 - 239
  • [44] VACUUM-INSULATED-GATE FIELD-EFFECT TRANSISTOR
    HUANG, J
    HOWE, RT
    LEE, HS
    ELECTRONICS LETTERS, 1989, 25 (23) : 1571 - 1573
  • [45] Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor
    Croitoru, MD
    Gladilin, VN
    Fomin, VM
    Devreese, JT
    Magnus, W
    Schoenmaker, W
    Sorée, B
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (04) : 2305 - 2310
  • [46] Bismuth Oxide Extended-Gate Field-Effect Transistor as pH Sensor
    Prashant Sharma
    Rini Singh
    Rishi Sharma
    Ravindra Mukhiya
    Kamlendra Awasthi
    Manoj Kumar
    Journal of Electronic Materials, 2022, 51 : 2673 - 2681
  • [47] HYDROGEN-ION SENSITIVE FIELD-EFFECT TRANSISTOR WITH TANTALUM OXIDE GATE
    AKIYAMA, T
    SUGANO, T
    NIKI, E
    BUNSEKI KAGAKU, 1980, 29 (09) : 584 - 588
  • [48] APPLICATION OF SPLIT-GATE AND DUAL-GATE FIELD-EFFECT TRANSISTOR DESIGNS TO INAS FIELD-EFFECT TRANSISTORS
    LONGENBACH, KF
    BERESFORD, R
    WANG, WI
    SOLID-STATE ELECTRONICS, 1990, 33 (09) : 1211 - 1213
  • [49] Investigation on Hot Carrier Reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor
    Yeoh, Yun Young
    Suk, Sung Dae
    Li, Ming
    Yeo, Kyoung Hwan
    Kim, Dong-Won
    Jin, Gyoyoung
    Oh, Kyoungsuk
    2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2, 2009, : 400 - 404
  • [50] A new quantum effect in metal-oxide-semiconductor field-effect transistor: Threshold voltage creep with gate voltage
    Quan, WY
    Kim, DM
    Kim, YJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (7A): : 4484 - 4488
12345