Fundamental understanding of quantum confinement effect on gate oxide reliability for gate-all around field-effect transistor

被引：0
|
作者：
Li, Xufan [1 ,2 ]
Huang, Shijie [1 ]
Wang, Jiawei [1 ]
Wang, Lingfei [1 ,2 ]
Li, Ling [1 ,2 ]
机构：
[1] Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing,100029, China
[2] University of Chinese Academy of Sciences, Beijing,100049, China
来源：
Journal of Applied Physics | / 136卷 / 23期
关键词：
All Open Access; Hybrid Gold;
D O I：
10.1063/5.0229625
中图分类号：
学科分类号：
摘要：
26
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