Investigation of a Gate Stack Gate-All-Around Junctionless Nanowire Field-Effect Transistor for Oxygen Gas Sensing

被引:0
|
作者
Rishu Chaujar
Mekonnen Getnet Yirak
机构
[1] Delhi Technological University,Department of Applied Physics
[2] Debre Tabor University,Physics Department
来源
关键词
Junctionless; oxygen gas sensor; gate-all-around; gate stack; nanowire field-effect transistor;
D O I
暂无
中图分类号
学科分类号
摘要
The design and analysis of a gate stack gate-all-around junctionless nanowire field-effect transistor (GAA-JL-NWFET) with a catalytic metal as gate contact for oxygen gas sensing is presented in this study. An n-channel GAA-JL-NWFET design using gold (Au) as the gate metal electrode is employed for oxygen sensing by utilizing appropriate work function values, which interact with oxygen gas and change the device's electrical properties. This work focuses on changes in temperature (300–500 K) and Au metal gate work function (5.05–5.20 eV) to investigate the presence of oxygen molecules and their impact on the GAA-JL-NWFET gas sensor performance. Changes in the surface potential, threshold voltage, hole concentration, electron concentration, subthreshold voltage, electric field, and drain current using the ATLAS TCAD simulator are investigated for the adsorption of gas molecules to determine the electrical characteristics of the proposed device. Changes in threshold voltage (Vth), switching ratio, and subthreshold current sensitivity (SIOFF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$S_{{I_{{{\text{OFF}}}} }}$$\end{document}) can be considered as sensitivity parameters for sensing oxygen gas molecules. The results reveal that as the Au work function shifts at the gate by 100 mV, the sensitivity (SIOFF\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$S_{{I_{{{\text{OFF}}}} }}$$\end{document}) enhancement using gate stack GAA-JL-NWFET-based oxygen gas sensors compared to GAA-MOSFET and conventional MOSFET are 15.13% and 88.31%, respectively. Based on our simulation results, the proposed device offers excellent sensitivity, low power consumption, and a fast response time, making it an appropriate candidate for oxygen gas sensing, including environmental monitoring, medical diagnosis, and industrial safety.
引用
收藏
页码:2191 / 2201
页数:10
相关论文
共 50 条
  • [1] Investigation of a Gate Stack Gate-All-Around Junctionless Nanowire Field-Effect Transistor for Oxygen Gas Sensing
    Chaujar, Rishu
    Yirak, Mekonnen Getnet
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (04) : 2191 - 2201
  • [2] Sensitivity Investigation of Junctionless Gate-all-around Silicon Nanowire Field-Effect Transistor-Based Hydrogen Gas Sensor
    Chaujar, Rishu
    Yirak, Mekonnen Getnet
    [J]. SILICON, 2023, 15 (01) : 609 - 621
  • [3] Sensitivity Investigation of Junctionless Gate-all-around Silicon Nanowire Field-Effect Transistor-Based Hydrogen Gas Sensor
    Rishu Chaujar
    Mekonnen Getnet Yirak
    [J]. Silicon, 2023, 15 : 609 - 621
  • [4] Junctionless gate-all-around nanowire field-effect transistors with an extended gate in biomolecule detection
    Chen, Chih-Wei
    Lin, Ru-Zheng
    Chiang, Li-Chuan
    Pan, Fu-Ming
    Sheu, Jeng-Tzong
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (02)
  • [5] Design and Investigation of Silicon Gate-All-Around Junctionless Field-Effect Transistor Using a Step Thickness Gate Oxide
    Zhang, Wenlun
    Wang, Baokang
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 2021, E104C (08) : 379 - 385
  • [6] Tunneling Leakage Current of Gate-All-Around Nanowire Junctionless Transistor with an Auxiliary Gate
    Zhao, Linyuan
    Chen, Wenjie
    Liang, Renrong
    Liu, Yu
    Xu, Jun
    [J]. 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
  • [7] Gate-All-Around Nanowire Junctionless Transistor-Based Hydrogen Gas Sensor
    Mokkapati, Siddharth
    Jaiswal, Nivedita
    Gupta, Manish
    Kranti, Abhinav
    [J]. IEEE SENSORS JOURNAL, 2019, 19 (13) : 4758 - 4764
  • [8] Sensitivity Investigation of Gate-All-Around Junctionless Transistor for Hydrogen Gas Detection
    Pratap, Yogesh
    Kumar, Manoj
    Gupta, Mridula
    Haldar, Subhasis
    Gupta, R. S.
    Deswal, S. S.
    [J]. 7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
  • [9] Peculiarities of the SCLC Effect in Gate-All-Around Silicon Nanowire Field-Effect Transistor Biosensors
    Zhang, Yongqiang
    Boichuk, Nazarii
    Pustovyi, Denys
    Chekubasheva, Valeriia
    Long, Hanlin
    Petrychuk, Mykhailo
    Vitusevich, Svetlana
    [J]. ADVANCED ELECTRONIC MATERIALS, 2024, 10 (07):
  • [10] Germanium v/s Silicon Gate-All-Around Junctionless Nanowire Transistor
    Kumar, Pankaj
    Singh, Sangeeta
    Singh, Neelesh Pratap
    Modi, Bharti
    Gupta, Neelesh
    [J]. 2014 2ND INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS), 2014,