Tunneling Leakage Current of Gate-All-Around Nanowire Junctionless Transistor with an Auxiliary Gate

被引：0
|
作者：
Zhao, Linyuan [1 ,2 ]
Chen, Wenjie [1 ,2 ]
Liang, Renrong [1 ,2 ]
Liu, Yu [1 ,2 ]
Xu, Jun [1 ,2 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing, Peoples R China
[2] Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing, Peoples R China
来源：
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2019年
基金：
中国国家自然科学基金;
关键词：
Gate-all-around nanowire junctionless transistor; auxiliary gate; hand-to-hand tunneling; energy band;
D O I：
10.1109/edssc.2019.8754335
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Gate-all-around nanowire junctionless transistor with an auxiliary gate (AG-GAAJLT) is proposed to restrain the band-to-band tunneling (BTBT) resulted in off-state leakage current in junctionless transistor. The device is investigated through three-dimensional (3D) numerical simulations. Results show that the AG-GAAJLT has seven orders of magnitude lower off-state current compared with the conventional gate-all-around junctionless transistor (C-GAAJLT). The effects of auxiliary gate voltage (V-AG) and distance between control gate and auxiliary gate (d(G-AG)) are studied, and the optimizations of V-AG and d(G-AG) are presented. This work provides a new method to solve the BTBT in GAAJLT.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Representation of strained gate-all-around junctionless tunneling nanowire filed effect transistor for analog applications
    Abadi, Rouzbeh Molaei Imen
    Ziabari, Seyed Ali Sedigh
    MICROELECTRONIC ENGINEERING, 2016, 162 : 12 - 16
  • [2] Germanium v/s Silicon Gate-All-Around Junctionless Nanowire Transistor
    Kumar, Pankaj
    Singh, Sangeeta
    Singh, Neelesh Pratap
    Modi, Bharti
    Gupta, Neelesh
    2014 2ND INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS), 2014,
  • [3] Gate-All-Around Nanowire Junctionless Transistor-Based Hydrogen Gas Sensor
    Mokkapati, Siddharth
    Jaiswal, Nivedita
    Gupta, Manish
    Kranti, Abhinav
    IEEE SENSORS JOURNAL, 2019, 19 (13) : 4758 - 4764
  • [4] NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants
    Martinez, A.
    Aldegunde, M.
    Brown, A. R.
    Roy, S.
    Asenov, A.
    SOLID-STATE ELECTRONICS, 2012, 71 : 101 - 105
  • [5] Characteristic of p-Type Junctionless Gate-All-Around Nanowire Transistor and Sensitivity Analysis
    Han, Ming-Hung
    Chang, Chun-Yen
    Jhan, Yi-Ruei
    Wu, Jia-Jiun
    Chen, Hung-Bin
    Cheng, Ya-Chi
    Wu, Yung-Chun
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (02) : 157 - 159
  • [6] Investigation of a Gate Stack Gate-All-Around Junctionless Nanowire Field-Effect Transistor for Oxygen Gas Sensing
    Chaujar, Rishu
    Yirak, Mekonnen Getnet
    JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (04) : 2191 - 2201
  • [7] Investigation of a Gate Stack Gate-All-Around Junctionless Nanowire Field-Effect Transistor for Oxygen Gas Sensing
    Rishu Chaujar
    Mekonnen Getnet Yirak
    Journal of Electronic Materials, 2024, 53 : 2191 - 2201
  • [8] Analysis of gate-induced drain leakage in gate-all-around nanowire transistors
    Yabin Sun
    Yaxin Tang
    Xiaojin Li
    Yanling Shi
    Teng Wang
    Jun Xu
    Ziyu Liu
    Journal of Computational Electronics, 2020, 19 : 1463 - 1470
  • [9] Analysis of gate-induced drain leakage in gate-all-around nanowire transistors
    Sun, Yabin
    Tang, Yaxin
    Li, Xiaojin
    Shi, Yanling
    Wang, Teng
    Xu, Jun
    Liu, Ziyu
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2020, 19 (04) : 1463 - 1470
  • [10] Compact Analytical Drain Current Model of Gate-All-Around Nanowire Tunneling FET
    Vishnoi, Rajat
    Kumar, M. Jagadesh
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (07) : 2599 - 2603
12345